2D flash-silicon chip achieves record speed, 94% memory yield

Researchers at Fudan University have developed the world’s first full-featured 2D flash memory chip integrated with traditional silicon CMOS technology, achieving a record operation speed and a 94.3% memory cell yield. This hybrid chip supports eight-bit instruction operations and 32-bit high-speed parallel random access, surpassing existing flash memory speeds. The innovation represents a significant breakthrough in combining ultrathin 2D semiconductor materials—just a few atoms thick—with mature silicon platforms, addressing key limitations in speed and power consumption that have hindered AI and data-intensive computing systems. The team overcame major challenges in integrating fragile 2D materials onto the uneven surfaces of conventional silicon wafers by employing flexible 2D materials and a modular, atomic-scale bonding approach. This method enables stable, high-density interconnections between the two technologies, facilitating efficient communication and paving the way for industrial-scale production. The chip has completed its tape-out phase, and plans are underway to establish a pilot production line to scale manufacturing.