China targets high-tech chip security with homegrown ion implanters

China has achieved a significant breakthrough in semiconductor manufacturing with the development of its first high-energy hydrogen ion implanter, the POWER-750H, announced by the China Institute of Atomic Energy. This advanced equipment, described as a “microscopic scalpel,” is critical for embedding precise ions into silicon wafers, a key process in chip fabrication. The POWER-750H reportedly matches leading international standards, marking a major step toward reducing China’s dependence on imported ion implantation technology, which has been restricted by foreign controls and market monopolies. The development leverages China’s expertise in nuclear physics and accelerator technology, enabling the country to independently design and produce tandem-type high-energy hydrogen ion implanters. Ion implantation is one of the “four core tools” in semiconductor manufacturing, essential for creating the internal structures of chips such as transistors and diodes. Achieving stable, high-energy ion beams that can operate reliably over long periods posed significant technical challenges, which China has now overcome. This advancement complements broader