China’s 1-second capacitor leap strengthens power delivery for military lasers

Chinese scientists from the Institute of Metal Research at the Chinese Academy of Sciences have developed a breakthrough in capacitor manufacturing by reducing the production time for dielectric energy storage films to just one second. Using an ultra-fast flash annealing technique—heating and cooling the material at approximately 1,832°F (1,000°C) per second—the team formed crystal films on silicon wafers in a single step. This method dramatically shortens production compared to traditional processes that take minutes to hours, while achieving comparable or superior energy density and thermal stability up to 482°F (250°C). The films maintain strong performance under harsh conditions, including rapid temperature swings, making them suitable for demanding applications such as hybrid electric vehicles, deep oil exploration, and aerospace. The new dielectric capacitors exhibit an energy storage density of 63.5 joules per cubic centimeter, outperforming other annealing methods under similar conditions. Their ability to charge and discharge rapidly with high power density is particularly valuable for advanced defense systems, including high