New test detects defects in solar cells with 1,000 times sensitivity

Korean researchers at the Korea Advanced Institute of Science & Technology (KAIST) have developed a novel measurement technique that detects hidden defects, or electronic traps, in semiconductors with approximately 1,000 times greater sensitivity than existing methods. These electronic traps are microscopic flaws that capture electrons and impede electrical current flow, causing device inefficiencies and performance degradation in components like memory chips and solar cells. By precisely identifying these defects and their interactions with electrons, the new method enables a more accurate evaluation of semiconductor quality, potentially improving device efficiency, longevity, and reducing development costs and time. The technique builds upon traditional Hall measurements by incorporating controlled light exposure and temperature variations, allowing simultaneous analysis of charge carrier movement and electronic traps within a single experiment. As light intensity increases, traps fill with electrons until saturated, after which excess electrons freely move through the material. Monitoring electrical changes during this process yields critical parameters such as electron mobility, lifetime, travel distance, and detailed defect properties. The researchers validated the approach on silicon