Record-breaking quantum material could outpace every semiconductor

Scientists from the University of Warwick and the National Research Council of Canada have developed a silicon-compatible quantum material exhibiting the highest electrical conductivity ever recorded for such materials. This breakthrough involves a nanometer-thin, compressively strained germanium layer grown on a silicon wafer, termed compressively strained germanium on silicon (cs-GoS). By applying controlled compressive strain, the researchers created an ultra-pure crystal structure that significantly enhances charge mobility, achieving a record hole mobility of 7.15 million cm²/V·s—far surpassing standard industrial silicon and previous group-IV semiconductors compatible with modern chip fabrication. This advancement addresses key challenges in the semiconductor industry, which faces physical limits as silicon-based chips shrink and generate more heat. Germanium, known for superior charge mobility but difficult to integrate with silicon manufacturing, is now viable at scale through cs-GoS. The material’s compatibility with existing silicon fabrication infrastructure promises faster, more energy-efficient electronics and quantum devices, potentially extending the life of silicon chip