Self-etching process opens new pathways for 2D perovskite electronics

A collaborative research team from China and the US has developed a novel semiconductor fabrication method called self-etching, which addresses the limitations of conventional lithography in working with delicate two-dimensional (2D) lead halide perovskite materials. Traditional lithography techniques, which rely on vertical laser etching, often cause damage due to sideways light scattering, especially problematic for soft, chemically unstable materials like 2D perovskites. The new self-etching approach leverages the internal stress within growing perovskite crystals to form controlled lateral microstructures from within, enabling precise nanoscale patterning without the damage caused by conventional photolithography or harsh chemical solvents. This breakthrough offers a new material platform and design pathway for high-performance light-emitting and integrated electronic devices, overcoming the machining challenges that have limited the use of 2D perovskites in advanced semiconductor applications. The method allows the creation of pixel-like units with tunable color and brightness, resulting in single crystal waf